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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1730TP SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The PA1730TP which has a heat spreader is a P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain 1.49 0.21 1.44 TYP. FEATURES * Low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS = -10 V, ID = -6.5 A) RDS(on)2 = 13.5 m MAX. (VGS = -4.5 V, ID = -6.5 A) RDS(on)3 = 15.0 m MAX. (VGS = -4.0 V, ID = -6.5 A) * Low Ciss: Ciss = 3800 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power HSOP8) 1 5.2 +0.17 -0.2 4 0.8 0.2 S +0.10 -0.05 6.0 0.3 4.4 0.15 0.05 0.05 0.15 1.27 TYP. 0.40 1 +0.10 -0.05 0.10 S 0.12 M 2.0 0.2 2.9 MAX. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 8 9 4.1 MAX. PA1730TP 5 ABSOLUTE MAXIMUM RATINGS (TA = 25C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (DC) Note1 Note2 VDSS VGSS ID(DC)1 ID(DC)2 ID(pulse) PT1 Note1 -30 !20 !28 !15 !100 40 3 150 -55 to +150 -15 22.5 V V A A A W W C C A mJ Gate Gate Protection Diode Body Diode Drain Drain Current (pulse) Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 PT2 Tch Tstg IAS EAS 1.1 0.2 4 EQUIVALENT CIRCUIT Source Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec. 2. PW 10 s, Duty Cycle 1% 3. Starting Tch = 25C, VDD = -15 V, RG = 25 , VGS = -20 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15935EJ1V0DS00 (1st edition) Date Published March 2002 NS CP(K) Printed in Japan (c) 2002 PA1730TP ELECTRICAL CHARACTERISTICS (TA = 25 C, Unless otherwise noted, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -24 V VGS = -10 V ID = -13.0 A IF = 13 A, VGS = 0 V IF = 13 A, VGS = 0 V di/dt = 100 A/ s TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = !20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -6.5 A VGS = -10 V, ID = -6.5 A VGS = -4.5 V, ID = -6.5 A VGS = -4.0 V, ID = -6.5 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -15 V, ID = -6.5 A VGS = -10 V RG = 10 MIN. TYP. MAX. UNIT -1 !10 -1.0 11.0 A A V S -1.6 23.0 7.6 10.3 11.3 3800 1200 500 15 20 130 50 70 9 17 0.80 53 57 -2.5 9.5 13.5 15.0 m m m pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG VGS = -20 0 V - ID VDD BVDSS VDS 50 L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD VDS (-) 90% 90% 10% 10% VGS (-) VGS Wave Form 0 10% VGS 90% IAS VGS (-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA 50 RL VDD PG. 2 Data Sheet G15935EJ1V0DS PA1730TP TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 2.8 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 100 80 60 40 20 0 2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA -1000 ID - Drain Current - A -100 -10 PW = PW ed 1 it ID(DC) m = im V) s 10 ) L 10 n - (o m = DS s R GS (V Power Dissipation Limited ID(pulse) -1 TC = 25C Single Pulse -0.1 -0.01 -0.1 PW = 100 ms -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 100 10 Rth(ch-C) = 31.3C/W 1 0.1 0.01 100 Single Pulse 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15935EJ1V0DS 3 PA1730TP FORWARD TRANSFER CHARACTERISTICS -100 -10 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -60 -50 VDS = -10 V Pulsed VGS = -10 V -4.5 V -4.0 V ID - Drain Current - A -1 -0.1 -0.01 -0.001 TA = 150C 125C 75C 25C -25C -50C ID - Drain Current - A -2 -3 Pulsed -4 -40 -30 -20 -10 0 0 -0.0001 0 -1 -0.2 -0.4 -0.6 -0.8 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 ID = -13.0 A -6.5 A 20 Pulsed |yfs| - Forward Transfer Admittance - S 100 TA = -50C -25C 25C 75C 125C 150C VDS = -10 V Pulsed 10 1 10 0.1 -0.1 -1 -10 -100 0 0 -5 -10 -15 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed 25 20 15 10 5 0 -0.1 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V -2.0 VDS = -10 V ID = -1 mA -1.5 VGS = -4.0 V -4.5 V -10 V -1.0 -0.5 -1 -10 -100 -1000 0 -50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - C 4 Data Sheet G15935EJ1V0DS PA1730TP RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 20 18 16 14 12 10 8 6 4 -50 0 50 100 ID = -6.5 A 150 VGS = -4.0 V -4.5 V -10 V ISD - Diode Forward Current - A Pulsed 10 VGS = -4.0 V 1 0V 0.1 0.01 0.001 0 0.5 1.0 1.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss 1000 td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 1000 Ciss, Coss, Crss - Capacitance - pF td(off) 100 tf tr 10 VDD = -15 V VGS = -10 V RG = 10 -1 -10 -100 td(on) Coss Crss 100 VGS = 0 V f = 1 MHz 10 -0.1 -1 -10 -100 1 -0.1 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DIODE CURRENT 1000 di/dt = 100 A/ s VGS = 0 V -40 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V -30 VDS = -24 V -15 V -6 V VGS -12 -10 -8 -6 100 -20 10 -10 VDS 0 0 10 20 30 40 50 60 70 -4 -2 0 1 -0.1 -1 -10 -100 IF - Diode Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V trr - Reverse Recovery Time - ns ID = -13.0 A Data Sheet G15935EJ1V0DS 5 PA1730TP [MEMO] 6 Data Sheet G15935EJ1V0DS PA1730TP [MEMO] Data Sheet G15935EJ1V0DS 7 PA1730TP * The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
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